SCB chips by the doped process with oxygen-free silicon diffusion may keep resistance stable and consistent, and impurity concentration gradient helps to decreasing the ignition energy of SCB igniting device. 采用无氧的多晶硅扩散掺杂工艺制作SCB芯片能保持电阻稳定一致,能满足阻值要求,而且这种扩散工艺导致芯片杂质浓度的梯度正好有利于SCB点火装置发火能的降低。
Effects of impurity on parallel velocity shear and ion temperature gradient instabilities in plasmas 杂质对等离子体平行速度剪切及离子温度梯度不稳定性的影响
During the impurity radiation, the density perturbation driven by density gradient couples with the temperature one and then affects the electrostatic potential one. 电子密度梯度直接影响密度涨落,并通过杂质辐射与温度涨落相互耦合,进而影响静电势涨落。